Floating Stacking Fault during Homoepitaxial Growth of Ag(111)

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

Submonolayer homoepitaxial film growth

In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also anisotropy in the growth is involved. We found from computer simulations for simple cubic lattice and solid-on-solid model, that the surface morphology changes with ...

Submonolayer homoepitaxial films growth

In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also anisotropy in the growth is involved. We found from computer simulations for simple cubic lattice and solid-on-solid model, that surface morphology changes with incr...

Pulsed sputtering during homoepitaxial surface growth: layer-by-layer forever

The homoepitaxial growth of initially flat surfaces has so far always led to surfaces which become rougher and rougher as the number of layers increases: even in systems exhibiting ‘‘layer-by-layer’’ growth the registry of the layers is gradually lost. We propose that pulsed glancing-angle sputtering, once per monolayer, can in principle lead to layer-by-layer growth that continues indefinitely...

Observation of Stacking Fault Tetrahedral in TWIP Steel

Low stacking fault energy face centered cubic (FCC) materials contain characteristic defect structures. Stacking fault tetrahedral are one of those rare structures that occur under special experimental conditions. For the first time, stacking fault tetrahedral were observed in Fe-30Mn-3Al-3Si twinning induced plasticity (TWIP) steel. Their presence resulted from a quenching heat treatment.